Study of interface chemistry between the carrier-transporting layers and their influences on the stability and performance of organic solar cells

被引:7
作者
Hilal, Muhammad [1 ]
Han, Jeong In [1 ]
机构
[1] Dongguk Univ Seoul, Dept Chem & Biochem Engn, Seoul 04620, South Korea
基金
新加坡国家研究基金会;
关键词
Bulk heterojunction organic solar cell; Thin-film deposition; Device fabrication; Interface chemistry; Electrical conductivity; Stability; REDUCED GRAPHENE OXIDE; V2O5; THIN-FILMS; BULK-HETEROJUNCTION; FUNCTIONALIZED GRAPHENE; PHOTOVOLTAIC DEVICES; WORK FUNCTION; POLYMER; HOLE; EFFICIENT; SPECTROSCOPY;
D O I
10.1007/s13204-018-0818-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This is the first study that described how the interface interactions of graphene oxide (GO) with poly(3-hexylthiophene): 3'H-cyclopropa [8,25] [5,6] fullerene-C60-D5h(6)-3'-butanoic acid 3'-phenyl methyl ester (PCBM) and with poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) are influencing the stability and performance of poly(3-hexylthiophene): poly(3-hexylthiophene) (P3HT) (P3HT:PCBM)-based organic solar cell. The interface functionalization of these carrier-transporting layers was confirmed by XRD pattern, XPS analysis, and Raman spectroscopy. These interfaces chemical bond formation helped to firmly attach the GO layer with PCBM and PEDOT:PSS layers, forming a strong barrier against water molecule absorption and also provided an easy pathway for fast transfer of free carriers between P3HT:PCBM layer and metal electrodes via the backbone of the conjugated GO sheets. Because of these interface interactions, the device fabricated with PCBM/GO composite as an electron transport layer and GO/PEDOT:PSS composite as hole transport layer demonstrated a remarkable improvement in the value of power conversion efficiency (5.34%) and reproducibility with a high degree of control over the environmental stability (600 h). This study is paving a way for a new technique to further improve the stability and PCE for the commercialization of OSCs.
引用
收藏
页码:1325 / 1341
页数:17
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