Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics

被引：30

作者：

Kukli, Kaupo

Ritala, Mikko

Leskela, Markku

Sundqvist, Jonas

Oberbeck, Lars

Heitmann, Johannes

Schroeder, Uwe

Aarik, Jaan

Aidla, Aleks

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

[2] Qimonda Dresden GmbH & Co OHG, D-01099 Dresden, Germany

[3] Univ Tartu, Inst Phys, EE-51010 Tartu, Estonia

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 16期

关键词：

atomic layer deposition; dielectric properties; multilayers; nanostructures;

D O I：

10.1016/j.tsf.2006.11.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition was applied to fabricate metal oxide films on planar substrates and also in deep trenches with appreciable step coverage. Atomic layer deposition of Ru electrodes was realized on planar substrates. Electrical and structural behaviour of HfO2-TiO2 and A1(2)O(3)-TiO2 nanolaminates and mixtures as well as Al2O3 films were evaluated. The lowest leakage current densities with the lowest equivalent oxide thickness were achieved in mixed Al2O3-TiO2 films annealed at 700 degrees C, compared to all other films in as-deposited state as well as annealed at 900 degrees C. The highest permittivities in this study were measured on HfO2-TiO2 nanolaminates. (C) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：6447 / 6451

页数：5

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