Probing the relationship between structural and optical properties of Si-doped AlN

被引：16

作者：

Pantha, B. N. ^{[1
]}

Sedhain, A. ^{[1
]}

Li, J. ^{[1
]}

Lin, J. Y. ^{[1
]}

Jiang, H. X. ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

aluminium compounds; edge dislocations; elemental semiconductors; energy gap; III-V semiconductors; photoluminescence; screw dislocations; semiconductor doping; semiconductor epitaxial layers; silicon; wide band gap semiconductors; X-ray diffraction; MULTIPLE-QUANTUM WELLS; MU-M; WAVELENGTH;

D O I：

10.1063/1.3374444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (similar to 6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, N-screw, which increases with the Si doping concentration (N-Si). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing N-screw at a rate of similar to 3.3 +/- 0.7 meV/10(8) cm(-2) (26.5 +/- 4 meV/10(8) cm(-2)), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.

引用

页数：3

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