Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

被引：4

作者：

Baraban, A. P. ^{[1
]}

Dmitriev, V. A. ^{[1
]}

Prokof'ev, V. A. ^{[1
]}

Drozd, V. E. ^{[1
]}

Filatova, E. O. ^{[1
]}

机构：

[1] St Petersburg State Univ, St Petersburg 199034, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 04期

关键词：

Technical Physic Letter; Dynamic Random Access Memory; Tantalum Pentoxide; Oxidize Silicon Substrate; Ta2O5 Film;

D O I：

10.1134/S1063785016040040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

引用

页码：341 / 343

页数：3

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