Thermoelectric properties of SnSe nanowires with different diameters

被引:33
作者
Hernandez, Jose A. [1 ]
Ruiz, Angel [1 ]
Fonseca, Luis F. [1 ]
Pettes, Michael T. [2 ,3 ,5 ]
Jose-Yacaman, Miguel [4 ]
Benitez, Alfredo [4 ]
机构
[1] Univ Puerto Rico, Dept Phys, Rio Piedras Campus, San Juan, PR 00931 USA
[2] Univ Connecticut, Dept Mech Engn, Storrs, CT 06269 USA
[3] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[4] Univ Texas San Antonio, Dept Phys, San Antonio Campus, San Antonio, TX 78249 USA
[5] Los Alamos Natl Lab, Ctr Integrated Nanotechnol CINT, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
关键词
PERFORMANCE; FIGURE; NANOSTRUCTURES; ANHARMONICITY; MERIT; POWER; HEAT;
D O I
10.1038/s41598-018-30450-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Tin selenide (SnSe) has been the subject of great attention in the last years due to its highly efficient thermoelectricity and its possibilities as a green material, free of Pb and Te. Here, we report for the first time a thermoelectricity and transport study of individual SnSe micro-and nano-wires with diameters in the range between 130 nm and 1.15 mu m.X-ray diffraction and transmission electron microscopy analyses confirm an orthorhombic SnSe structure with Pnma (62) symmetry group and 1:1 Sn:Se atomic ratio. Electrical and thermal conductivity and the Seebeck coefficient were measured in each individual nanowire using a specialized suspended microdevice in the 150-370 K temperature range, yielding a thermal conductivity of 0.55 Wm(-1) K-1 at room temperature and ZT - 0.156 at 370 K for the 130 nm diameter nanowire. The measured properties were correlated with electronic information obtained by model simulations and with phonon scattering analysis. The results confirm these structures as promising building blocks to develop efficient temperature sensors, refrigerators and thermoelectric energy converters. The thermoelectric response of the nanowires is compared with recent reports on crystalline, polycrystalline and layered bulk structures.
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页数:8
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共 51 条
[1]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[2]   High-performance bulk thermoelectrics with all-scale hierarchical architectures [J].
Biswas, Kanishka ;
He, Jiaqing ;
Blum, Ivan D. ;
Wu, Chun-I ;
Hogan, Timothy P. ;
Seidman, David N. ;
Dravid, Vinayak P. ;
Kanatzidis, Mercouri G. .
NATURE, 2012, 489 (7416) :414-418
[3]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[4]   Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties [J].
Butt, Faheem K. ;
Mirza, Misbah ;
Cao, Chuanbao ;
Idrees, Faryal ;
Tahir, Muhammad ;
Safdar, Muhammad ;
Ali, Zulfiqar ;
Tanveer, M. ;
Aslam, Imran .
CRYSTENGCOMM, 2014, 16 (17) :3470-3473
[5]   Low thermal conductivity and triaxial phononic anisotropy of SnSe [J].
Carrete, Jesus ;
Mingo, Natalio ;
Curtarolo, Stefano .
APPLIED PHYSICS LETTERS, 2014, 105 (10)
[6]   Thermoelectric properties of p-type polycrystalline SnSe doped with Ag [J].
Chen, Cheng-Lung ;
Wang, Heng ;
Chen, Yang-Yuan ;
Day, Tristan ;
Snyder, G. Jeffrey .
JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (29) :11171-11176
[7]   Thermal conductance of thin silicon nanowires [J].
Chen, Renkun ;
Hochbaum, Allon I. ;
Murphy, Padraig ;
Moore, Joel ;
Yang, Peidong ;
Majumdar, Arun .
PHYSICAL REVIEW LETTERS, 2008, 101 (10)
[8]   The effect of Te doping on the electronic structure and thermoelectric properties of SnSe [J].
Chen, Song ;
Cai, Kefeng ;
Zhao, Wenyu .
PHYSICA B-CONDENSED MATTER, 2012, 407 (21) :4154-4159
[9]   High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds [J].
Ding, Guangqian ;
Gao, Guoying ;
Yao, Kailun .
SCIENTIFIC REPORTS, 2015, 5
[10]   New directions for low-dimensional thermoelectric materials [J].
Dresselhaus, Mildred S. ;
Chen, Gang ;
Tang, Ming Y. ;
Yang, Ronggui ;
Lee, Hohyun ;
Wang, Dezhi ;
Ren, Zhifeng ;
Fleurial, Jean-Pierre ;
Gogna, Pawan .
ADVANCED MATERIALS, 2007, 19 (08) :1043-1053