Hall emf features in bipolar media

被引:3
作者
Konin, A [1 ]
Raguotis, R [1 ]
机构
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
关键词
D O I
10.1088/0953-8984/12/43/306
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An expression for the Hall electromotive force (emf) in a bipolar bounded semiconductor sample is obtained by taking into account both volume and surface recombination rates. It is shown that the Hall emf value has non-linear dependence on the sample thickness. The Hall emf value also depends significantly on the surface parameters, such as Surface recombination rates and surface conductivity of carriers.
引用
收藏
页码:9163 / 9166
页数:4
相关论文
共 5 条
[1]  
BASS FG, 1984, ELECT PHONONS BOUNDA
[2]   NATURE OF THE THERMOPOWER IN BIPOLAR SEMICONDUCTORS [J].
GUREVICH, YG ;
TITOV, OY ;
LOGVINOV, GN ;
LYUBIMOV, OI .
PHYSICAL REVIEW B, 1995, 51 (11) :6999-7004
[3]  
KIREEV PS, 1969, SEMICONDUCTOR PHYSIC
[4]   Thermo emf in bipolar semiconductors [J].
Konin, A ;
Raguotis, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (02) :229-232
[5]  
KONIN AM, 1990, LIET FIZ RINKINYS, V30, P295