Engineering the electronic structure and band gap of boron nitride nanoribbon via external electric field

被引：19
|
作者：
Chegel, Raad [1 ]
机构：
[1] Malayer Univ, Fac Sci, Dept Phys, Malayer, Iran
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 06期
关键词：
BN NANORIBBONS; NANOTUBES; RIBBONS;
D O I：
10.1007/s00339-016-0095-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E-g is similar for some N-a armchair and N-z zigzag BNNRs independent of their edges.
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页数：8
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