Introduction of selectively nucleated lateral crystallization of lead zirconate titanate thin films for fabrication of high-performance ferroelectric random access memory

被引:16
作者
Lee, JS [1 ]
Joo, SK [1 ]
机构
[1] Seoul Natl Univ, Coll Engn, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 11期
关键词
PZT; thin film; selectively nucleated lateral crystallization; single grain; grain boundary; ferroelectric random access memory;
D O I
10.1143/JJAP.39.6343
中图分类号
O59 [应用物理学];
学科分类号
摘要
We found that large single grains of lead zirconate titanate (PZT) thin film of which grain size was as large as 40 mum in length could be fabricated by lateral crystallization from the seeds. The seeds were prepared on the Pt substrate in the form of crystallized PZT dots. The electrical characteristics of PZT thin films (Pt/PZT/Pt structure) obtained by selectively nucleated lateral crystallization (SNLC) were found to be superior to those of polycrystalline PZT thin films. PZT thin films obtained by SNLC showed a leakage current density of 8 x 10(-8) A/cm(2), a breakdown field of 1240 kV/cm, a saturation polarization of 42 muC/cm(2), and a remanent polarization of 30 muC/cm(2). No degradation of the electrical properties was observed even after 2 x 10(11) cycles using 1 MHz square wave form at +/- 10 V. Retention test revealed no appreciable data loss after 30000 s of memory retention at room temperature.
引用
收藏
页码:6343 / 6347
页数:5
相关论文
共 17 条
[1]  
AGGARWAL S, 1997, TEXTIT THIN FILM FER, P222
[2]   TEMPERATURE DEPENDENT FATIGUE RATES IN THIN-FILM FERROELECTRIC CAPACITORS [J].
Brennan, Ciaran J. ;
Parrella, Ronald D. ;
Larsen, Duane E. .
FERROELECTRICS, 1994, 151 (01) :33-38
[3]  
CHEN J, 1992, P 4 INT S INT FERR, P111
[4]  
Desu S. B., 1993, Integrated Ferroelectrics, V3, P365, DOI 10.1080/10584589308216692
[5]  
DIMOS D, 1997, THIN FILM FERROELECT, P199
[6]  
Groeseneken G, 1997, NONVOLATILE SEMICOND, P1
[7]  
JOO JH, 1997, FERROELECTRICS, V196, P1
[8]  
JOO JH, 1995, 1995 INT C SOL STAT, P512
[9]  
KIM KH, 1998, P 10 INT S INT FERR
[10]  
Raymond M. V., 1994, Integrated Ferroelectrics, V5, P73, DOI 10.1080/10584589408018681