Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains

被引：21

作者：

Guo, Chenyu ^{[1
,2
]}

Guo, Wei ^{[1
,3
]}

Dai, Yijun ^{[1
,3
]}

Xu, Houqiang ^{[1
,3
]}

Chen, Li ^{[1
,3
]}

Wang, Danhao ^{[2
]}

Peng, Xianchun ^{[1
]}

Tang, Ke ^{[1
]}

Sun, Haiding ^{[2
]}

Ye, Jichun ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

OPTICS LETTERS | 2021年 / 46卷 / 13期

基金：

中国国家自然科学基金;

关键词：

SPECTRAL RESPONSE; GAN;

D O I：

10.1364/OL.428721

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report aGaN-based self-powered metal-semiconductor-metal (MSM)-type ultraviolet (UV) photodetector (PD) by employing a "lateral polarity structure (LPS)" grown on the sapphire substrate. An in-plane internal electric field and different Schottky barrier heights at a metal/semiconductor interface lead to efficient carrier separation and self-powered UV detection. A dark current of 6.8 nA/cm(2) and detectivity of 1.0 x 10(12) Jones were obtained without applied bias. A high photo-to-dark current ratio of 1.2 x 10(4) and peak responsivity of 933.7 mA/W were achieved for the lateral polarity structure-photodetector (LPS-PD) under 10 V. The enhanced performance of the LPS-PD was ascribed to the polarization-induced carrier separation as demonstrated by the lateral band diagram. (C) 2021 Optical Society of America

引用

页码：3203 / 3206

页数：4

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