75 GHz 80 mW InP DHBT power amplifier

被引：0

作者：

Wei, Y ^{[1
]}

Urteaga, M ^{[1
]}

Griffith, Z ^{[1
]}

Scott, D ^{[1
]}

Xie, S ^{[1
]}

Paidi, V ^{[1
]}

Parthasarathy, N ^{[1
]}

Rodwell, M ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a 75 GHz MMIC power amplifier in InP/InGaAs/InP DHBT transferred-substrate technology. The amplifier has 256 mum(2) total emitter area and exhibits a power gain of 5.5 dB at 75 GHz and a saturated output power of 19 dBm (80mW) under 1-dB gain compression. The DHBT employed by the amplifier has a lightly doped InP emitter epitaxial layer between the emitter and the emitter cap layer as a distributed ballast resistance to improve thermal stability. To our knowledge, this is the highest reported output power for a W-band HBT power amplifier.

引用

页码：919 / 921

页数：3

共 9 条

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[J]. 2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 917 - 920
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