Improved interfacial state density in Al2O3/GaAs interfaces using metal-organic chemical vapor deposition

被引：7

作者：

Cheng, Cheng-Wei ^{[1
]}

Fitzgerald, Eugene A. ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期

关键词：

OXIDE THIN-FILMS; FABRICATION; GROWTH;

D O I：

10.1063/1.3428790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ deposition of Al2O3 on GaAs was performed by chemical-vapor-deposition (CVD) with trimethyaluminum and isopropanol as precursors. A gallium-rich region in the Al2O3 thin film above the interface was spontaneously formed via the in situ CVD process. Ga-enrichment of the interface was observed using secondary ion mass spectrometry (SIMS) depth profile measurement. X-ray photoelectron spectroscopy (XPS) results show that the gallium-rich region consists of Al2O3 and Ga2O3, but no As2O3 was observed. The Ga2O3-Al2O3 layer above the oxide/GaAs interface reduces the frequency dispersion as measured with capacitance-voltage (C-V) characteristics and lowers the interfacial state density as compared to atomic-layer-deposition *(ALD) deposited films which do not display this gallium enrichment above the interface. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3428790]

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页数：3

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