Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates

被引：42

作者：

Jung, Younghun ^{[1
]}

Baik, Kwang Hyeon ^{[2
]}

Ren, Fan ^{[3
]}

Pearton, Stephen J. ^{[4
]}

Kim, Jihyun ^{[1
]}

机构：

[1] Korea Univ, Dept Biol & Chem Engn, Seoul 136701, South Korea

[2] Korea Elect Technol Inst, Optoelect Lab, Gyeonggi 463816, South Korea

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 06期

关键词：

SURFACE; EFFICIENCY;

D O I：

10.1149/1.3384713

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied the effects of photo electrochemical (PEC) etching by using various concentrations (1, 2, and 4 M) of KOH solutions on both Ga- and N-face GaN layers on sapphire substrates. The Ga- face was chemically stable for KOH solutions, while by sharp contrast the KOH could etch the N-face, where the 6-fold symmetry was observed after the PEC etching. Surface texturing of GaN-based light emitting diodes and solar cells by KOH-based PEC etch could enhance the efficiency of GaN-based photonic devices by increasing the number of the scattering events and randomly changing the angles of the light. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3384713] All rights reserved.

引用

页码：H676 / H678

页数：3

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