Electronic structure and localized states in a model amorphous silicon

被引：38

作者：

Allan, G ^{[1
]}

Delerue, C ^{[1
]}

Lannoo, M ^{[1
]}

机构：

[1] Dept Inst Super Elect Nord, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.57.6933

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of a model amorphous silicon (a-Si) represented by a supercell of 4096 silicon atoms [B.R. Djordjevic, M.F. Thorpe, and F. Wooten, Phys. Rev. B 52, 5685 (1995)] and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight-binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Comparison with experiments suggests that the structural models give good descriptions of the amorphous materials.

引用

页码：6933 / 6936

页数：4

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