Magnetic Field Annealing Effects on Magnetic Properties of Electrodeposited Co/Cu Multilayered Nanowires

被引:6
作者
Javed, Khalid [1 ,2 ]
Shi, Da Wei [1 ]
Ali, Syed Shahbaz [1 ]
Jiang, Jun [1 ]
Liu, Pan [1 ]
Han, Xiu Feng [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] CIIT WAH, Dept Elect Engn, Wah Cantt, Pakistan
关键词
Co/Cu multilayered nanowires; magnetic anisotropy; magnetic field (MF) annealing; PERPENDICULAR GIANT MAGNETORESISTANCE; ANISOTROPY; ARRAYS; ALLOYS; CO; DEPOSITION; MEMBRANE;
D O I
10.1109/TMAG.2014.2310056
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Co/Cu nanowires were fabricated by electrodeposition using anodic alumina templates, with 100 nm diameter nanopores. The thickness of Co and Cu layer was about 45 and 5 nm, respectively. The magnetic properties of multilayered nanowires have been studied before and after simple and magnetic field (MF) annealing. For simple annealing, an increase in coercivity and squareness (SQ) along easy axis of magnetization has been observed. Magnetic field annealing has been done under MF of 1 T. For comparison, the MF annealing effect on magnetic properties has been studied using fast and slow temperature variations. The corresponding change in saturation magnetization, coercivity, remanent SQ, and the shape of hysteresis loops has been investigated. The coercivity Hc decreases in case of MF annealing with fast temperature variation, whereas it increases in case of MF annealing with slow temperature variation, as compared with as deposited. The enhanced magnetic anisotropy has been observed by slow MF annealing (SMFA), whereas magnetic anisotropy attenuated a little by fast MF annealing. Annealing without MF has also shown the enhanced magnetic anisotropy. SMFA and annealing without MF is likely to improve the interface of Co/Cu.
引用
收藏
页数:4
相关论文
共 25 条
  • [1] Ahmad N., 2011, J APPL PHYS, V109
  • [2] Magnetic anisotropy and magnetization reversal in Co/Cu multilayers nanowires
    Ahmad, Naeem
    Chen, J. Y.
    Shi, D. W.
    Iqbal, Javed
    Han, Xiufeng
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
  • [3] Stacking faults and their effect on magnetocrystalline anisotropy in Co and Co-alloy thin films
    Bian, B
    Yang, W
    Laughlin, DE
    Lambeth, DN
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2001, 37 (04) : 1456 - 1458
  • [4] GIANT MAGNETORESISTANCE OF NANOWIRES OF MULTILAYERS
    BLONDEL, A
    MEIER, JP
    DOUDIN, B
    ANSERMET, JP
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (23) : 3019 - 3021
  • [5] Effect of field deposition and pore size on Co/Cu barcode nanowires by electrodeposition
    Cho, Ji Ung
    Wu, Jun-Hua
    Min, Ji Hyun
    Lee, Ju Hun
    Liu, Hong-Ling
    Kim, Young Keun
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) : 2420 - 2422
  • [6] Electrochemical control and selection of the structural and magnetic properties of cobalt nanowires
    Darques, M
    Piraux, L
    Encinas, A
    Bayle-Guillemaud, P
    Popa, A
    Ebels, U
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
  • [7] Controlled growth of CoCu nanowires and application to multilayered CoCu/Cu nanowires with selected anisotropy
    Darques, Michael
    Bogaert, Anne-Sophie
    Elhoussine, Fanny
    Michotte, Sebastien
    Medina, Joaquin de la Torre
    Encinas, Armando
    Piraux, Luc
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (23) : 5025 - 5032
  • [8] Magnetoresistance governed by fluctuations in ultrasmall Ni/NiO/Co junctions
    Doudin, B
    Redmond, G
    Gilbert, SE
    Ansermet, JP
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (05) : 933 - 936
  • [9] Perpendicular giant magnetoresistance in Co/Cu and permalloy/Cu multilayered nanowires
    Dubois, S
    Duvall, JL
    Fert, A
    George, JM
    Maurice, JL
    Piraux, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 4569 - 4569
  • [10] Approach to fabricating Co nanowire arrays with perpendicular anisotropy: Application of a magnetic field during deposition
    Ge, SH
    Li, C
    Ma, X
    Li, W
    Xi, L
    Li, CX
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) : 509 - 511