Van der Waals epitaxy of transition metal dichalcogenides using metal organic precursors (MOVDWE)

被引：0
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作者：
Tiefenbacher, S
Pettenkofer, C
Jaegermann, W
机构：
来源：
FRONTIERS IN NANOSCALE SCIENCE OF MICRON/SUBMICRON DEVICES | 1996年 / 328卷
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T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of WS2 on various layered substrates have been prepared using W(CO)(6) as metal precursor. Therefore the name Metal Organic van der Waals epitaxy (MOvdWE) is proposed for this new method. Despite a lattice mismatch of up to 32% the films show very high crystalline quality as is deduced from XPS, UPS and especially LEED and STM measurements. Moreover, the films exhibit an interesting Moire-like superstructure in LEED, which proves the abruptness of the interface and the ideal growth of the two-dimensional hexagonal lattice of the film on the hexagonal substrate without lattice distortions.
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页码：59 / 65
页数：7
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