Investigating the thermoelectric properties of p-type half-Heusler Hfx(ZrTi)1-xCoSb0.8Sn0.2 by reducing Hf concentration for power generation

被引:56
作者
He, Ran
Kim, Hee Seok
Lan, Yucheng
Wang, Dezhi
Chen, Shuo
Ren, Zhifeng [1 ]
机构
[1] Univ Houston, Dept Phys, Houston, TX 77204 USA
来源
RSC ADVANCES | 2014年 / 4卷 / 110期
关键词
PERFORMANCE BULK THERMOELECTRICS; FIGURE-OF-MERIT; TEMPERATURE; ALLOYS;
D O I
10.1039/c4ra14343d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Based on the fact that Hf is much more expensive than other commonly used elements in HfCoSb-based half-Heusler materials, we studied the thermoelectric properties of the p-type half-Heusler Hf-x(ZrTi)(1-x)CoSb0.8Sn0.2 by reducing Hf concentration. A peak ZT of similar to 1.0 was achieved at 700 degrees C with the composition of Hf0.19Zr0.76Ti0.05CoSb0.8Sn0.2 by keeping the Hf/Zr ratio at 1/4 and Hf/Ti at 4/1. This composition has much reduced cost and similar thermoelectric performance compared with our previously reported best p-type half-Heusler: Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. Due to the decreased usage of Hf, it is more favorable for consideration in applications. In addition, a higher output power is expected because of the higher power factor even though the conversion efficiency is the same due to the same ZT.
引用
收藏
页码:64711 / 64716
页数:6
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