Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions

被引：17

作者：

Bottegoni, F. ^{[1
]}

Zucchetti, C. ^{[1
]}

Isella, G. ^{[1
]}

Pinotti, E. ^{[1
]}

Finazzi, M. ^{[1
]}

Ciccacci, F. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Fis, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 124卷 / 03期

关键词：

POLARIZED ELECTRON SOURCE; ROOM-TEMPERATURE; OPTICAL-ABSORPTION; GALLIUM-ARSENIDE; SILICON; PHOTOEMISSION; GAAS; SEMICONDUCTORS; GERMANIUM; TRANSPORT;

D O I：

10.1063/1.5037653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the photon energy dependence of the photo-induced inverse spin-Hall effect (ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly accounts for the electron spin diffusion length L-s in the semiconductor. In particular, we consider the Pt/GaAs, Pt/Ge, and Pt/Si systems: although optical spin injection and transport of spin-polarized electrons in the conduction band of these semiconductors are ruled by different mechanisms, a simple one dimensional analytical diffusion model, where L-s is the free parameter, can reproduce the ISHE data in all cases. This highlights the potentialities of the photo-induced ISHE spectra as a tool to directly address fundamental spin transport properties in semiconductors. Published by AIP Publishing.

引用

页数：6

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