NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation

被引：0

作者：

Srinivasan, P. ^{[1
]}

Fronheiser, J. ^{[1
]}

Siddiqui, S. ^{[1
,2
]}

Kerber, A. ^{[1
]}

Edge, L. F. ^{[2
]}

Siddiqui, S. ^{[1
,2
]}

Southwick, R. G., III ^{[2
]}

Cartier, E. ^{[2
]}

机构：

[1] GLOBALFOUNDRIES, Malta, NY 12020 USA

[2] IBM SRDC, Bangalore, Karnataka, India

来源：

2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年

关键词：

FEOL; gate stack; reliability; NBTI; SiGe; nitridation; interface state density; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative Bias Temperature Instability (NBTI) is assessed in (100) Si planar cSi(0.5)Ge(0.5) Replacement Metal Gate (RMG) gate stacks, with and without high-k nitridation for various post nitridation anneal (PNA) conditions. Observed initial N-it was 8 similar to 9x10(11) cm(-2). Nitrided devices show higher NBTI than non-nitrided devices. Observed time slopes become shallower from similar to 0.25 to similar to 0.20. Overall, observed NBTI in cSi(0.5)Ge(0.5) stacks are promising making it viable for use in 7nm and below nodes.

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页数：6

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