Anomalous enhancement of thermoelectric power factor by thermal management with resonant level effect

被引:26
作者
Sakane, Shunya [1 ]
Ishibe, Takafumi [1 ]
Mizuta, Kosei [1 ]
Fujita, Takeshi [2 ]
Kiyofuji, Yuga [3 ]
Ohe, Jun-ichiro [3 ]
Kobayashi, Eiichi [4 ]
Nakamura, Yoshiaki [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama Cho, Toyonaka, Osaka 5608531, Japan
[2] Kochi Univ Technol, Sch Environm Sci & Engn, 185 Miyanokuchi, Kami, Kochi 7828502, Japan
[3] Toho Univ, Dept Phys, 2-2-1 Miyama, Funabashi, Chiba 2748510, Japan
[4] Kyusyu Synchrotron Light Res Ctr, 8-7 Yayoigaoka, Tosu, Saga 8410005, Japan
关键词
PERFORMANCE; SILICON; SI; GE; FIGURE; NANOSTRUCTURES; OPTIMIZATION; CONVERGENCE; BANDS;
D O I
10.1039/d0ta08683e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Obtaining high thermoelectric performance has been the biggest historical challenge for thermoelectric power generation. Here, we propose a methodology for thermoelectric power factor enhancement: thermal management with resonant level effect for simultaneous increase of electrical conductivity sigma and Seebeck coefficient S. Au crystals and Au impurities are introduced into SiGe. Therein, (1) highly-conductive Au crystals increased sigma. (2) Au impurities brought about resonant level effect and phonon scattering, resulting in enhanced S and lowered thermal conductivity kappa of SiGe. (3) This kappa distribution control brings the focus of temperature difference on SiGe parts with lowered kappa, resulting in the availability of the enhanced S of SiGe parts as effective S of the entire nanocomposite. Consequently, we achieved the highest S-2 sigma at room temperature among SiGe-related materials ever reported. Electronic structure calculation and measurement support the existence of resonant levels, which enhances S and lowers kappa. These results provide a new route to thermoelectric performance enhancement.
引用
收藏
页码:4851 / 4857
页数:7
相关论文
共 51 条
  • [1] Enhancement in thermoelectric performance of SiGe nanoalloys dispersed with SiC nanoparticles
    Bathula, Sivaiah
    Jayasimhadri, M.
    Gahtori, Bhasker
    Kumar, Anil
    Srivastava, A. K.
    Dhar, Ajay
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (36) : 25180 - 25185
  • [2] High-performance bulk thermoelectrics with all-scale hierarchical architectures
    Biswas, Kanishka
    He, Jiaqing
    Blum, Ivan D.
    Wu, Chun-I
    Hogan, Timothy P.
    Seidman, David N.
    Dravid, Vinayak P.
    Kanatzidis, Mercouri G.
    [J]. NATURE, 2012, 489 (7416) : 414 - 418
  • [3] Biswas K, 2011, NAT CHEM, V3, P160, DOI [10.1038/nchem.955, 10.1038/NCHEM.955]
  • [4] Blaha P., 2001, WIEN2K AUGMENTED PLA
  • [5] Silicon nanowires as efficient thermoelectric materials
    Boukai, Akram I.
    Bunimovich, Yuri
    Tahir-Kheli, Jamil
    Yu, Jen-Kan
    Goddard, William A., III
    Heath, James R.
    [J]. NATURE, 2008, 451 (7175) : 168 - 171
  • [6] Nanostructured Bulk Silicon as an Effective Thermoelectric Material
    Bux, Sabah K.
    Blair, Richard G.
    Gogna, Pawan K.
    Lee, Hohyun
    Chen, Gang
    Dresselhaus, Mildred S.
    Kaner, Richard B.
    Fleurial, Jean-Pierre
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (15) : 2445 - 2452
  • [7] Thermoelectric power factor: Enhancement mechanisms and strategies for higher performance thermoelectric materials
    Dehkordi, Arash Mehdizadeh
    Zebarjadi, Mona
    He, Jian
    Tritt, Terry M.
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2015, 97 : 1 - 22
  • [8] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K
    DISMUKES, JP
    EKSTROM, E
    BEERS, DS
    STEIGMEIER, EF
    KUDMAN, I
    [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2899 - &
  • [9] Influence of in situ formed MoSi2 inclusions on the thermoelectrical properties of an N-type silicon-germanium alloy
    Favier, Katia
    Bernard-Granger, Guillaume
    Navone, Christelle
    Soulier, Mathieu
    Boidot, Mathieu
    Leforestier, Jean
    Simon, Julia
    Tedenac, Jean-Claude
    Ravot, Didier
    [J]. ACTA MATERIALIA, 2014, 64 : 429 - 442
  • [10] Electronic structure calculations for Au-doped Ge and Si with a possible high thermoelectric power
    Fukushima, K
    Kondo, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3226 - 3230