Highly sensitive gas sensing platforms based on field effect Transistor-A review

被引：45

作者：

Zhang, Pan ^{[1
]}

Xiao, Yin ^{[2
]}

Zhang, Jingjing ^{[1
]}

Liu, Bingjie ^{[2
]}

Ma, Xiaofei ^{[1
]}

Wang, Yong ^{[1
]}

机构：

[1] Tianjin Univ, Sch Sci, Tianjin Key Lab Mol Optoelect Sci, Dept Chem,Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Sch Chem Engn & Technol, Tianjin Engn Res Ctr Funct Fine Chem, Tianjin 300072, Peoples R China

来源：

ANALYTICA CHIMICA ACTA | 2021年 / 1172卷

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Field effect transistor; Gas sensors; OXIDE THIN-FILM; VOLATILE ORGANIC-COMPOUNDS; OF-THE-ART; SILICON NANOWIRE; MOLYBDENUM-DISULFIDE; SELECTIVE DETECTION; CARBON NANOTUBES; CHEMICAL SENSORS; FACILE SYNTHESIS; GRAPHENE;

D O I：

10.1016/j.aca.2021.338575

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Highly selective, sensitive and fast gas sensing has attracted increasing attention in the fields of environmental protection, industrial production, personal safety as well as medical diagnostics. Field effect transistor (FET) sensors have been extensively investigated in gas sensing fields due to their small size, high sensitivity, high reliability and low energy consumption. This comprehensive review aims to discuss the recent advances in FET gas sensors based on materials such as carbon nanotubes, silicon carbide, silicon, metal oxides-, graphene-, transition metal dichalcogenides-and 2-dimensional black phosphorus. We first introduce different types of sensor structures and elaborate the gas-sensing mechanisms. Then, we describe the optimizing strategies for sensing performances, response parameters, FET based dual-mode sensors and FET based logic circuit sensors. Moreover, we present the key advances of the above materials in gas sensing performances. Meanwhile, shortcomings of such materials are also discussed and the future development of this field is proposed in this review. (c) 2021 Elsevier B.V. All rights reserved.

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