Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in Mo/B4C/Si layered systems

被引:17
作者
de Rooij-Lohmann, V. I. T. A. [1 ]
Yakshin, A. E. [1 ]
van de Kruijs, R. W. E. [1 ]
Zoethout, E. [1 ]
Kleyn, A. W. [1 ]
Keim, E. G. [2 ]
Gorgoi, M. [3 ]
Schaefers, F. [3 ]
Brongersma, H. H. [4 ]
Bijkerk, F. [1 ,2 ]
机构
[1] FOM Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, BESSY 2, D-12489 Berlin, Germany
[4] Tascon GmbH, D-48149 Munster, Germany
关键词
MOLYBDENUM; MULTILAYERS; INTERFACE; SILICIDE; CARBIDE; FILMS;
D O I
10.1063/1.3460107
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of an amorphous-to-nanocrystalline phase transition on the diffusion across an interface layer of subnanometer thickness has been investigated in real-time. The diffusion in the Mo/B4C/Si thin film structure studied was found to instantaneously enhance by an order of magnitude upon the formation of nanocrystals inducing the atomic-scale onset of grain boundary diffusion. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460107]
引用
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页数:5
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