0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

被引：59
作者：
Mikhrin, SS
Zhukov, AE
Kovsh, AR
Maleev, NA
Ustinov, VM
Shernyakov, YM
Soshnikov, IP
Livshits, DA
Tarasov, IS
Bedarev, DA
Volovik, BV
Maximov, MV
Tsatsul'nikov, AF
Ledentsov, NN
Kop'ev, PS
Bimberg, D
Alferov, ZI
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 11期
关键词：
D O I：
10.1088/0268-1242/15/11/309
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK QD one in power characteristics. A maximum output power of 3.9 W and a peak power conversion efficiency of 59% have been achieved for SML QD 100 mum wide lasers at 10 degreesC.
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收藏
页码：1061 / 1064
页数：4
相关论文
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[11]   3.9W CW power from sub-monolayer quantum dot diode laser [J].
Zhukov, AE ;
Kovsh, AR ;
Mikhrin, SS ;
Maleev, NA ;
Ustinov, VM ;
Livshits, DA ;
Tarasov, IS ;
Bedarev, DA ;
Maximov, MV ;
Tsatsul'nikov, AF ;
Soshnikov, IP ;
Kop'ev, PS ;
Alferov, ZI ;
Ledentsov, NN ;
Bimberg, D .
ELECTRONICS LETTERS, 1999, 35 (21) :1845-1847
12