Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

被引：38

作者：

Hollaender, B. ^{[1
,2
]}

Buca, D. ^{[1
,2
]}

Mantl, S. ^{[1
,2
]}

Hartmann, J. M. ^{[3
]}

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] MINATEC, CEA LETI, F-38054 Grenoble 9, France

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 06期

关键词：

LAYERS; GATE;

D O I：

10.1149/1.3382944

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Device concepts are applied to strained layers ranging from pure Si to pure Ge to achieve higher carrier mobilities. Strain is generated by growth on Si1-xGex buffer layers with an appropriate Ge content. Processing of these heterostructures requires selective removal of individual layers. Different approaches to the etch Si, Si1-xGex, and Ge layers have been evaluated in terms of the etch rate, selectivity, and isotropy. All investigated etching methods used highly selective chemical etching solutions composed of HF, hydrogen peroxide, and acetic acid (HF:H2O2:CH3COOH). The effect of the different HF content on the etch rate of pure Si, pure Ge, and Si1-xGex alloys with Ge mole fractions between 20 and 75% is presented. In general, the etch rate increases significantly with the increase in Ge content. As an example, the etch rate increases by a factor of more than 100 when the Ge content increases from 20 up to 75 atom %. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3382944] All rights reserved.

引用

页码：H643 / H646

页数：4

共 17 条

[1] An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step [J].

Abbadie, A. ;

Hartmann, J. M. ;

Di Nardo, C. ;

Billon, T. ;

Campidelli, Y. ;

Besson, P. .

MICROELECTRONIC ENGINEERING, 2006, 83 (10) :1986-1993

[2] Impact of Mobility Boosters (XsSOI, CESL, UN gate) on the Performance of ⟨100⟩ or ⟨110⟩ oriented FDSOI cMOSFFTs for the 32nm Node [J].

Andrieu, F. ;

Faynot, O. ;

Rochette, F. ;

Barbe, J.-C. ;

Buj, C. ;

Bogumilowicz, Y. ;

Allain, F. ;

Delaye, V. ;

Lafond, D. ;

Aussenac, F. ;

Feruglio, S. ;

Eymery, J. ;

Akatsu, T. ;

Maury, P. ;

Brevard, L. ;

Tosti, L. ;

Dansas, H. ;

Rouchouze, E. ;

Hartmann, J. -M. ;

Vandroux, L. ;

Casse, M. ;

Boeuf, F. ;

Fenouillet-Beranger, C. ;

Brunier, F. ;

Cayrefourcq, I. ;

Mazure, C. ;

Ghibaudo, G. ;

Deleonibus, S. .

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :50-51

[3] Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration [J].

Augendre, E. ;

Sanchez, L. ;

Benaissa, L. ;

Signamarcheix, T. ;

Hartmann, J. -M. ;

Le Royer, C. ;

Vinet, M. ;

Van Den Daele, W. ;

Damlencourt, J. -F. ;

Romanjek, K. ;

Pouydebasque, A. ;

Batude, P. ;

Tabone, C. ;

Mazen, F. ;

Tauzin, A. ;

Blanc, N. ;

Pellat, M. ;

Dechamp, J. ;

Zussy, M. ;

Scheiblin, P. ;

Jaud, M. -A. ;

Drazek, C. ;

Maurois, C. ;

Piccin, M. ;

Abbadie, A. ;

Lallement, F. ;

Daval, N. ;

Guiot, E. ;

Rigny, A. ;

Ghyselen, B. ;

Bourdelle, K. K. ;

Boulanger, F. ;

Cristoloveanu, S. ;

Billon, T. ;

Faynot, O. ;

Deguet, C. ;

Clavelier, L. .

ULSI PROCESS INTEGRATION 6, 2009, 25 (07) :351-362

[4] Dry etch challenges in Gate All Around Devices for sub 32 nm applications [J].

Barnola, S. ;

Vizioz, C. ;

Vulliet, N. ;

Dupre, C. ;

Ernst, T. ;

Gautier, P. ;

Arvet, C. ;

Guillaumot, B. ;

Bernard, E. ;

Pauliac-Vaujeour, S. ;

Comboroure, C. ;

Hartmann, J. M. ;

Borel, S. ;

Chevolleau, T. ;

Maffini-Alvaro, V. ;

Becu, S. .

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10) :923-+

[5] High germanium content SiGe virtual substrates grown at high temperatures [J].

Bogumilowicz, Y ;

Hartmann, JM ;

Laugier, F ;

Rolland, G ;

Billon, T ;

Cherkashin, N ;

Claverie, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 283 (3-4) :346-355

[6]

CAMS TK, 1995, J ELECTROCHEM SOC, V142, P1260

[7]

Cayrefourcq I., 2006, ECS T, V3, P399, DOI [10.1149/1.2355837, DOI 10.1149/1.2355837]

[8] SELECTIVE ETCHING OF SIGE ON SIGE/SI HETEROSTRUCTURES [J].

CHANG, GK ;

CARNS, TK ;

RHEE, SS ;

WANG, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) :202-204

[9] Peracetic acid as active species in mixtures for selective etching of SiGe/Si layer systems - Aspects of chemistry and analytics [J].

Guder, Mathias ;

Kolbesen, B. O. ;

Delattre, Cecile ;

Fischer, C. ;

Schier, H. ;

Wagner, G. .

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII, 2008, 134 :79-+

[10] Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5) [J].

Hartmann, J. M. ;

Abbadie, A. ;

Rouchon, D. ;

Barnes, J. P. ;

Mermoux, M. ;

Billon, T. .

THIN SOLID FILMS, 2008, 516 (12) :4238-4246

← 1 2 →