A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies

被引：13
作者：
Fay, P [1 ]
Wohlmuth, W
Mahajan, A
Caneau, C
Chandrasekhar, S
Adesida, I
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] TriQuint Semicond, Hillsboro, OR 97124 USA
[3] Univ Illinois, Ctr Compound Semicond Microelect, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[4] Bell Commun Res Inc, Red Bank, NJ 07701 USA
[5] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 04期
关键词：
MSM photodetectors; optoelectronic integrated circuits; photoreceiver noise; photoreceivers; pin photodiodes;
D O I：
10.1109/68.662601
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM- and PIN-based photoreceivers. Sensitivities for the MSM/HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10(-9) and 2(7) -1 pattern length PRBS data. Corresponding performance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author's knowledge, this is the first direct experimental comparison of MSM-and PIN-based technologies for high-speed monolithic photoreceiver applications.
引用
收藏
页码：582 / 584
页数：3
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