Towards controlled bottom-up architectures in organic heterostructures

被引：21

作者：

de Oteyza, D. G.

Krauss, N.

Barrena, E.

Sellner, S.

Dosch, H.

Osso, J. O.

机构：

[1] Max Planck Inst Metallforsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Theoret & Angewandte Phys, D-70550 Stuttgart, Germany

[3] CSIC, Inst Ciencia Mat Barcelona, Bellaterra, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report a study on the growth of organic heterostructures based on di-indenoperylene (DIP) (p-type conduction) deposited on top of F16CuPc (n-type conduction) by real-time x-ray scattering and atomic force microscopy. Above a threshold temperature of 90 degrees C, the formation of highly crystalline DIP islands takes place via Stranski-Krastanov growth. The temperature dependence of the growth behavior can be exploited to control the resulting morphologies, ranging from well ordered layered heterostructures to the self-organization of highly crystalline DIP islands with tunable size. This self-organization scenario of organic ambipolar nanostructures carries the potential for bottom-up growth of organic architectures for solar cell structures. (c) 2007 American Institute of Physics.

引用

页数：3