Towards controlled bottom-up architectures in organic heterostructures

被引：21
|
作者：
de Oteyza, D. G.
Krauss, N.
Barrena, E.
Sellner, S.
Dosch, H.
Osso, J. O.
机构：
[1] Max Planck Inst Metallforsch, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Theoret & Angewandte Phys, D-70550 Stuttgart, Germany
[3] CSIC, Inst Ciencia Mat Barcelona, Bellaterra, Spain
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期
关键词：
D O I：
10.1063/1.2748211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report a study on the growth of organic heterostructures based on di-indenoperylene (DIP) (p-type conduction) deposited on top of F16CuPc (n-type conduction) by real-time x-ray scattering and atomic force microscopy. Above a threshold temperature of 90 degrees C, the formation of highly crystalline DIP islands takes place via Stranski-Krastanov growth. The temperature dependence of the growth behavior can be exploited to control the resulting morphologies, ranging from well ordered layered heterostructures to the self-organization of highly crystalline DIP islands with tunable size. This self-organization scenario of organic ambipolar nanostructures carries the potential for bottom-up growth of organic architectures for solar cell structures. (c) 2007 American Institute of Physics.
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页数：3
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