Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures

The results of an investigation of the structural perfection of GaAs epitaxial films grown by molecular-beam epitaxy at low growth temperatures (240-300 degrees C) and various As/Ga flux ratios (from 3 to 13) are presented. Diffraction reflection curves display characteristic features for the samples before and after annealing in the temperature range from 300 to 800 degrees C. Hypotheses which account for these features are advanced. The range of variation of the arsenic/gallium flux ratio, in which low-temperature growth takes place under nearly stoichiometric conditions, is established. (C) 1997 American Institute of Physics. [S1063-7826(97)00410-9].