Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures

被引：3
|
作者：
Galiev, GB
Imamov, RM
Medvedev, BK
Mokerov, VG
Mukhamedzhanov, EK
Pashaev, EM
Cheglakov, VB
机构：
[1] Inst. of Radio Eng. and Electronics, Russian Academy of Sciences
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 10期
关键词：
D O I：
10.1134/1.1187013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of an investigation of the structural perfection of GaAs epitaxial films grown by molecular-beam epitaxy at low growth temperatures (240-300 degrees C) and various As/Ga flux ratios (from 3 to 13) are presented. Diffraction reflection curves display characteristic features for the samples before and after annealing in the temperature range from 300 to 800 degrees C. Hypotheses which account for these features are advanced. The range of variation of the arsenic/gallium flux ratio, in which low-temperature growth takes place under nearly stoichiometric conditions, is established. (C) 1997 American Institute of Physics. [S1063-7826(97)00410-9].
引用
收藏
页码：1003 / 1005
页数：3
相关论文
共 50 条
  • [1] Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures
    G. B. Galiev
    R. M. Imamov
    B. K. Medvedev
    V. G. Mokerov
    É. Kh. Mukhamedzhanov
    É. M. Pashaev
    V. B. Cheglakov
    Semiconductors, 1997, 31 : 1003 - 1005
  • [2] Structural properties of GaAs layers grown by molecular beam epitaxy at low temperatures
    Galiev, GB
    Mokerov, VG
    Cheglakov, VB
    Demkina, TB
    Pashaev, AM
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 267 - 270
  • [3] Hopping conduction in GaAs layers grown by molecular-beam epitaxy at low temperatures
    Shimogishi, F
    Mukai, K
    Fukushima, S
    Otsuka, N
    PHYSICAL REVIEW B, 2002, 65 (16): : 1 - 5
  • [4] STRUCTURAL CHARACTERIZATION OF GAAS GROWN AT LOW-TEMPERATURES BY MOLECULAR-BEAM EPITAXY
    MATYI, RJ
    MELLOCH, MR
    ZHANG, K
    MILLER, DL
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) : A139 - A143
  • [5] Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures
    Lavrukhin, D. V.
    Yachmenev, A. E.
    Bugaev, A. S.
    Galiev, G. B.
    Klimov, E. A.
    Khabibullin, R. A.
    Ponomarev, D. S.
    Maltsev, P. P.
    SEMICONDUCTORS, 2015, 49 (07) : 911 - 914
  • [6] Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures
    D. V. Lavrukhin
    A. E. Yachmenev
    A. S. Bugaev
    G. B. Galiev
    E. A. Klimov
    R. A. Khabibullin
    D. S. Ponomarev
    P. P. Maltsev
    Semiconductors, 2015, 49 : 911 - 914
  • [7] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
    KAMINSKA, M
    LILIENTALWEBER, Z
    WEBER, ER
    GEORGE, T
    KORTRIGHT, JB
    SMITH, FW
    TSAUR, BY
    CALAWA, AR
    APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1881 - 1883
  • [8] DIFFUSION OF ZINC INTO GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES
    SIN, YK
    HWANG, Y
    ZHANG, T
    KOLBAS, RM
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 465 - 469
  • [9] PROPERTIES OF SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW-TEMPERATURES
    JORKE, H
    KIBBEL, H
    SCHAFFLER, F
    CASEL, A
    HERZOG, HJ
    KASPER, E
    APPLIED PHYSICS LETTERS, 1989, 54 (09) : 819 - 821
  • [10] FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES
    MELLOCH, MR
    OTSUKA, N
    WOODALL, JM
    WARREN, AC
    FREEOUF, JL
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1531 - 1533
12345