Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

被引：0
作者：
Hou Zhi-Ling [1 ,2 ]
Cao Mao-Sheng [1 ]
Yuan Jie [3 ]
Song Wei-Li [1 ]
机构：
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Beijing Univ Chem Technol, Sch Sci, Beijing 100029, Peoples R China
[3] Cent Univ Nationalities, Sch Informat Engn, Beijing 100081, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 01期
基金：
中国国家自然科学基金;
关键词：
gamma-Y2Si2O7; dielectric properties; structural relaxation polarization; low dielectric loss; PRESSED SILICON-NITRIDE; YTTRIUM DISILICATE; OPTICAL-PROPERTIES; H-BN; CERAMICS; BEHAVIOR; NANOCOMPOSITES; STRENGTH;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper reports that single-phase gamma-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of gamma-Y2Si2O7 as a function of the temperature and frequency. The gamma-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 degrees C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared gamma-Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
引用
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页数：5
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