Photo degradation of p-nitrophenol in presence of semiconductor

被引：0
作者：
Joshi, JD [1 ]
Vora, J [1 ]
Sharma, S [1 ]
Patel, CC [1 ]
Patel, AB [1 ]
机构：
[1] Sardar Patel Univ, Dept Chem, Vallabh Vidyanagar 388120, Gujarat, India
来源：
ASIAN JOURNAL OF CHEMISTRY | 2004年 / 16卷 / 02期
关键词：
degradation; photocatalytic; p-nitrophenol; semiconductor;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The photocatalytic degradation of p-nitrophenol by irradiation in presence of semiconductor ZnO was studied. Kinetics of the reaction were found to be affected by parameters like concentration of substrate, pH, amount of photocatalyst, light intensity, band gap, etc. The effects of radical quencher, sensitizer were also studied. A probable. mechanism is also suggested.
引用
收藏
页码：1069 / 1075
页数：7
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