Excitons in anisotropic two-dimensional semiconducting crystals

被引：137

作者：

Rodin, A. S. ^{[1
]}

Carvalho, A. ^{[2
,3
]}

Neto, A. H. Castro ^{[1
,2
,3
]}

机构：

[1] Boston Univ, Boston, MA 02115 USA

[2] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 07期

关键词：

LAYER BLACK PHOSPHORUS; FIELD-EFFECT TRANSISTORS; MOBILITY; FILMS;

D O I：

10.1103/PhysRevB.90.075429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

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页数：7

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