Growth of CdAs2 single crystals by directional solidification in Bridgman geometry

被引：0
|
作者：
Marenkin, SF [1 ]
Raukhman, AM [1 ]
Maimasov, AB [1 ]
Popov, VA [1 ]
机构：
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 12期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Structurally perfect CdAs2 crystals 30 mm in diameter and 150 mm in length, with a 77-K carrier concentration p = 10(12) cm(-3), 77-K thermopower anisotropy of 230 mu V/K, dislocation density of 5 x 10(2) cm(-2), and absorption coefficient of 0.5 cm(-1) in the range 1.3-20 mu m were grown by the vertical Bridgman method. They are close in perfection and physical properties to vapor-grown crystals but are much larger in size.
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页码：1220 / 1226
页数：7
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