Growth of single-crystalline, atomically smooth MgO films on Ge(001) by molecular beam epitaxy

被引：26

作者：

Han, Wei ^{[1
]}

Zhou, Yi ^{[2
]}

Wang, Yong ^{[3
,4
]}

Li, Yan ^{[1
]}

Wong, Jared J. I. ^{[1
]}

Pi, K. ^{[1
]}

Swartz, A. G. ^{[1
]}

McCreary, K. M. ^{[1
]}

Xiu, Faxian ^{[2
]}

Wang, Kang L. ^{[2
]}

Zou, Jin ^{[3
,4
]}

Kawakami, R. K. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[3] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 312卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

Molecular beam epitaxy; Ge; MgO; Spintronics; ELECTRICAL SPIN-INJECTION; ROOM-TEMPERATURE; MAGNETORESISTANCE; SPINTRONICS; SILICON;

D O I：

10.1016/j.jcrysgro.2009.09.052

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the growth of MgO thin films on Ge(0 0 1) via molecular beam epitaxy and find that the growth temperature plays a key role in the quality of MgO thin films. Reflection high-energy electron diffraction (RHEED) and atomic force microscopy show that the singie-crystal quality and atomically smooth morphology are optimized for a growth temperature of 250 degrees C. RHEED and transmission electron microscopy indicate that the MgO is (0 0 1) oriented and the MgO unit cell has a 45 degrees in-plane rotation with respect to that of Ge, providing a high-quality film and interface for potential spin-injection experiments. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：44 / 47

页数：4

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