Epitaxial growth and interfacial property of monolayer MoS2 on gallium nitride

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) on semiconductor substrates are important for next-generation electronics and optoelectronics. In this study, we demonstrate the growth of monolayer MoS2 on a lattice-matched gallium nitride (GaN) semiconductor substrate by chemical vapor deposition (CVD). The monolayer MoS2 triangles exhibit optical properties similar to that of typical single-crystal MoS2 sheets, as verified by the Raman, photoluminescence, and morphological characterizations. The Raman and PL features and their intensity mappings suggest that the as-grown MoS2 on GaN substrate can achieve high quality and uniformity, demonstrating that GaN substrate is favorable for 2D MoS2 growth. Moreover, the interfacial property and stacking structure were investigated by first-principles density functional theory (DFT) calculations to confirm the interlayer interactions of monolayer MoS2 on GaN. Accordingly, the ability to grow high quality monolayer MoS2 on semiconductor GaN substrate would open a new route toward the synthesis of hetero and composite structures for promising electronic and optoelectronic device applications.