Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics

被引：12

作者：

Ok, InJo ^{[1
]}

Kim, H. ^{[1
]}

Zhang, M. ^{[1
]}

Zhu, F. ^{[1
]}

Park, S. ^{[1
]}

Yum, J. ^{[1
]}

Zhao, H. ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2790780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we studied the electrical characteristics of TaN/HfO2/GaAs metal-oxide-semiconductor capacitors with Si interface passivation layer (IPL) under various postdeposition anneal (PDA) conditions and various Si deposition temperatures/times. Using optimal Si IPL under reasonable PDA, post metal anneal conditions, and various Si deposition temperatures, excellent electrical characteristics with low frequency dispersion (< 5%, and 50 mV) and reasonable D-it value (similar to 10(12) eV(-1) cm(-2)) can be obtained. It was found that higher temperature of Si IPL deposition and longer PDA time at 600 degrees C improved equivalent oxide thickness and leakage current. (c) 2007 American Institute of Physics.

引用

页数：3

共 50 条

[21] Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal-oxide-semiconductor field effect transistor
Rhee, SJ
Kang, CY
Kang, CS
Choi, R
Choi, CH
Akbar, MS
Lee, JC
APPLIED PHYSICS LETTERS, 2004, 85 (07) : 1286 - 1288
[22] Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor
Kundu, Souvik
Halder, Nripendra N.
Biswas, D.
Banerji, P.
Shripathi, T.
Chakraborty, S.
JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)
[23] Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
Son, Junwoo
Chobpattana, Varistha
McSkimming, Brian M.
Stemmer, Susanne
APPLIED PHYSICS LETTERS, 2012, 101 (10)
[24] A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation
Yao, B.
Fang, Z. B.
Zhu, Y. Y.
Ji, T.
He, G.
APPLIED PHYSICS LETTERS, 2012, 100 (22)
[25] New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation
Xu, Min
Gu, Jiangjiang J.
Wang, Chen
Zhernokletov, D.M.
Wallace, R.M.
Ye, Peide D.
Journal of Applied Physics, 2013, 113 (01):
[26] New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation
Xu, Min
Gu, Jiangjiang J.
Wang, Chen
Zhernokletov, D. M.
Wallace, R. M.
Ye, Peide D.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (01)
[27] Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication
Choi, Donghun
Kim, Eunji
McIntyre, Paul C.
Harris, James S.
APPLIED PHYSICS LETTERS, 2008, 92 (20)
[28] Optical Phase Modulators Based on Reverse-Biased III-V/Si Hybrid Metal-Oxide-Semiconductor Capacitors
Li, Qiang
Ho, Chong Pei
Takagi, Shinichi
Takenaka, Mitsuru
IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 32 (06) : 345 - 348
[29] Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
Xie, Ruilong
He, Wei
Yu, Mingbin
Zhu, Chunxiang
APPLIED PHYSICS LETTERS, 2008, 93 (07)
[30] Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
Suzuki, Rena
Taoka, Noriyuki
Yokoyama, Masafumi
Kim, Sang-Hyeon
Hoshii, Takuya
Maeda, Tatsuro
Yasuda, Tetsuji
Ichikawa, Osamu
Fukuhara, Noboru
Hata, Masahiko
Takenaka, Mitsuru
Takagi, Shinichi
JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)

← 1 2 3 4 5 →