Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates

被引：63

作者：

Schubert, Martin F. ^{[1
]}

Chhajed, Sameer

Kim, Jong Kyu

Schubert, E. Fred

Cho, Jaehee

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Samsung Electromech, Corp Res & Dev Inst, Opto Syst Lab, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2757594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements on the polarization of top- and side-emitted light as a function of direction are performed for 460 nm GaInN unpackaged and packaged light-emitting diode (LED) chips with a multiquantum well (MQW) GaInN/GaN active region grown on (0001) oriented sapphire substrates. Side emission is found to be highly polarized with the electric field in the plane of the MQW. Intensity ratios for in-plane to normal-to-plane polarization reach values as high as 7:1, while the total intensity for the in-plane polarization is more than twice as large compared to the normal-to-plane polarization. Despite these measured polarization characteristics, conventional packaged LEDs are found to be virtually unpolarized due to packaging. (c) 2007 American Institute of Physics.

引用

页数：3

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