Possible role of 3He impurities in solid 4He

被引:8
|
作者
Manousakis, Efstratios [1 ]
机构
[1] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
[2] Florida State Univ, MARTECH, Tallahassee, FL 32306 USA
[3] Univ Athens, Dept Phys, Athens 15784, Greece
关键词
D O I
10.1209/0295-5075/78/36002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We use a quantum lattice gas model to describe essential aspects of the motion of 4 He atoms and of 3 He impurities in solid 4 He. This study suggests that 3 He impurities bind to defects and promote 4 He atoms to interstitial sites which can turn the bosonic quantum disordered crystal into a metastable supersolid. It is suggested that defects and interstitial atoms are produced during the solid 4 He nucleation process where the role of 3 He impurities ( in addition to the cooling rate) is known to be important even at very small ( 1 ppm) impurity concentration. It is also proposed that such defects can form a glass phase during the 4 He solid growth by rapid cooling. Copyright (C) EPLA, 2007.
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页数:6
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