Characterization of Y2SiO5:Ce thin films

被引：18

作者：

Coetsee, E.

Swart, H. C.

Terblans, J. J.

Ntwaeaborwa, O. M.

Hillie, K. T.

Jordaan, W. A.

Buttner, U.

机构：

[1] Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa

[2] CSIR, NML, ZA-0001 Pretoria, South Africa

[3] Univ Stellenbosch, Laser Res Inst, ZA-7600 Stellenbosch, South Africa

来源：

OPTICAL MATERIALS | 2007年 / 29卷 / 11期

关键词：

Y2SiO5 : Ce; thin films; cathodoluminescence; SEM; AFM; EDS; XRD; PLD;

D O I：

10.1016/j.optmat.2006.06.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Uncoated and SnO2-coated Y2SiO5:Ce thin film phosphors grown on Si (100) substrates by a pulsed laser deposition technique were characterized with scanning electron microscopy (SENI), atomic force microscopy (AFM), energy dispersive X-Ray analysis (EDS) and V X-Ray diffraction (XRD). Cathodoluminescence (CL) of both the uncoated and SnO2-coated thin film phosphors was investigated for possible application in low voltage field emission displays (FEDs). Blue emission with peak values at 440 and 500 mn was from spherically shaped particles distributed unevenly on the surfaces of both the uncoated and coated thin film phosphors. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1338 / 1343

页数：6

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