GaN/AlGaN nanostructures for intersubband optoelectronics

被引：4

作者：

Tchernycheva, M. ^{[1
]}

Macchadani, H. ^{[1
]}

Nevou, L. ^{[1
]}

Mangeney, J. ^{[1
]}

Julien, F. H. ^{[1
]}

Kandaswamy, P. K. ^{[2
]}

Wirthmueller, A. ^{[2
]}

Monroy, E. ^{[2
]}

Vardi, A. ^{[3
]}

Schacham, S. ^{[3
]}

Bahir, G. ^{[3
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] CEA Grenoble, INAC SP2M NPSC, F-38054 Grenoble, France

[3] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 06期

关键词：

GaN; AlN; infrared absorption; photodetectors; pump-and-probe experiments; quantum dots; quantum wells;

D O I：

10.1002/pssa.200983565

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured to be 165 fs. Intraband absorption saturation experiments reveal a record low switching energy. We then investigate quantum cascade ISB photodetectors based on GaN/AlGaN QWs and show that mesa devices with 17 x 17 mu m(2) size provide a frequency response above 10 GHz at 1.5 mu m wavelength. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1421 / 1424

页数：4

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