The fabrication and property evaluation of Zr-Ti-B-Si thin film metallic glass materials

被引:31
作者
Deng, Yu-Lun [1 ]
Lee, Jyh-Wei [1 ,2 ]
Lou, Bih-Show [3 ]
Duh, Jenq-Gong [4 ]
Chu, Jinn. P. [5 ]
Jang, Jason Shian-Ching [6 ]
机构
[1] Ming Chi Univ Technol, Dept Mat Engn, New Taipei City, Taiwan
[2] Ming Chi Univ Technol, Ctr Thin Films Technol & Applicat, New Taipei City, Taiwan
[3] Chang Gung Univ, Ctr Gen Educ, Div Chem, Taoyuan, Taiwan
[4] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[5] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei, Taiwan
[6] Natl Cent Univ, Dept Mech Engn, Inst Mat Sci & Engn, Chungli 32054, Taiwan
关键词
Zr-Ti-B-Si thin film metallic glass; Nanoindentation; Scratch test; Potentiodynamic polarization test; Corrosion resistance; MECHANICAL-PROPERTIES; ELASTIC-MODULUS; ALLOYS; MICROSTRUCTURE; HARDNESS;
D O I
10.1016/j.surfcoat.2014.03.026
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, the thin film metallic glass materials have attracted much attention due to their amorphous structure and unique properties. In this work, four Zr-Ti-B-Si thin film metal glasses (TFMGs) were fabricated on Si wafer and AISI 420 stainless steel disk substrates using four pure targets by a co-sputtering system. The power of Si target was adjusted to achieve TFMGs with different Si contents. The amorphous phase of TFMG was determined by X-ray diffractometer (XRD) and high resolution transmission electron microscopy (TEM). When the Si content was higher than 12.9 at.%, the dense and featureless microstructures of thin films were produced. Very high hardness, beyond 10 GPa, was obtained for Zr-Ti-B-Si TFMG containing high Si content. The excellence in corrosion resistance of Zr-Ti-B-Si TFMGs was confirmed by the potentiodynamic polarization test in 5.0 wt.% NaCl aqueous solution. It can be concluded that the Si content showed a positive influence on the hardness, adhesion and anti-corrosion performance of the Zr-Ti-B-Si thin film metallic glass. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:115 / 122
页数:8
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