Challenges of small-pixel infrared detectors: a review

被引:221
作者
Rogalski, A. [1 ]
Martyniuk, P. [1 ]
Kopytko, M. [1 ]
机构
[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego St, PL-00908 Warsaw, Poland
关键词
infrared detectors; infrared focal plane arrays; infrared barrier detectors; high operating temperature; microbolometers; FOCAL-PLANE ARRAYS; HGCDTE; PHOTODETECTORS; PERFORMANCE; TECHNOLOGY; SUPERLATTICES; PHOTODIODES; LIFETIME; DEVICES; LIMITS;
D O I
10.1088/0034-4885/79/4/046501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.
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页数:42
相关论文
共 91 条
  • [1] Adams A, 2014, LASER FOCUS WORLD, V50, P83
  • [2] [Anonymous], 2007, CMOS/ CCD sensors and camera systems
  • [3] MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES
    ARIAS, JM
    PASKO, JG
    ZANDIAN, M
    SHIN, SH
    WILLIAMS, GM
    BUBULAC, LO
    DEWAMES, RE
    TENNANT, WE
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 1049 - 1053
  • [4] HDVIP five-micron pitch HgCdTe focal plane arrays
    Armstrong, J. M.
    Skokan, M. R.
    Kinch, M. A.
    Luttmer, J. D.
    [J]. INFRARED TECHNOLOGY AND APPLICATIONS XL, 2014, 9070
  • [5] Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
    Aytac, Y.
    Olson, B. V.
    Kim, J. K.
    Shaner, E. A.
    Hawkins, S. D.
    Klem, J. F.
    Flatte, M. E.
    Boggess, T. F.
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (02)
  • [6] Uniform low defect density molecular beam epitaxial HgCdTe
    Bajaj, J
    Arias, JM
    Zandian, M
    Edwall, DD
    Pasko, JG
    Bubulac, LO
    Kozlowski, LJ
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) : 1394 - 1401
  • [7] Baker I. M., 1984, P SOC PHOTO-OPT INS, V510, P121
  • [8] BAKER IM, 1994, P SOC PHOTO-OPT INS, V2269, P636, DOI 10.1117/12.188683
  • [9] Latest pixel size reduction of uncooled IR-FPA at CEA, LETI
    Becker, Sebastien
    Imperinetti, Pierre
    Yon, Jean-Jacques
    Ouvrier-Buffet, Jean-Louis
    Goudon, Valerie
    Hamelin, Antoine
    Vialle, Claire
    Arnaud, Agnes
    [J]. ELECTRO-OPTICAL AND INFRARED SYSTEMS: TECHNOLOGY AND APPLICATIONS IX, 2012, 8541
  • [10] Lifetimes and Auger coefficients in type-II W interband cascade lasers
    Bewley, W. W.
    Lindle, J. R.
    Kim, C. S.
    Kim, M.
    Canedy, C. L.
    Vurgaftman, I.
    Meyer, J. R.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (04)