Visible sub-60-femtosecond dye laser with GaAs based semiconductor saturable absorber mirror

被引：1
作者：
Noh, YC [1 ]
Lim, YS
Lee, JH
Chang, JS
机构：
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Konkuk Univ, Dept Appl Phys, Chungju 380701, South Korea
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 15期
关键词：
D O I：
10.1049/el:20000936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaAs based semiconductor saturable absorber mirror (SESAM) has been fabricated using molecular beam epitaxy and applied to a hybridly modelocked Rh6G dye laser. The generated pulse was as short as 56fs at the centre wavelength of 580nm, which shows the shortest centre wavelength in these kinds of dye laser.
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收藏
页码：1288 / 1290
页数：3
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