Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

被引：18

作者：

Ajimsha, R. S. ^{[1
]}

Das, Amit K. ^{[1
]}

Joshi, M. P. ^{[1
]}

Kukreja, L. M. ^{[1
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Laser Mat Proc Div, Indore 452013, India

来源：

APPLIED SURFACE SCIENCE | 2014年 / 317卷

关键词：

PLD; Oxide thin film; Band offset; SOLAR-CELLS; CUGAO2;

D O I：

10.1016/j.apsusc.2014.08.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the band offset and alignment of pulsed laser deposited Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures using photoelectron spectroscopy. Al2O3/CuGaO2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type ll band alignment was observed in ZnO/CuGaO2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：994 / 999

页数：6

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