Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

被引：51

作者：

Tavernier, PR ^{[1
]}

Etzkorn, EV ^{[1
]}

Wang, Y ^{[1
]}

Clarke, DR ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.1311600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH3 at 550 degrees C and annealed at a growth temperature of 1050 degrees C, thick films of GaN can be grown by HVPE with fewer than 10(8) dislocations per cm(2). Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that similar to 23 mu m films have dislocation densities of similar to 6x10(7) cm(-2). Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness. (C) 2000 American Institute of Physics. [S0003-6951(00)03638-X].

引用

页码：1804 / 1806

页数：3

共 17 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].

AYERS, JE .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :71-77

[3] HYDRIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING A ZNO BUFFER LAYER [J].

DETCHPROHM, T ;

HIRAMATSU, K ;

AMANO, H ;

AKASAKI, I .

APPLIED PHYSICS LETTERS, 1992, 61 (22) :2688-2690

[4] CAPILLARY EQUILIBRIA OF DISLOCATED CRYSTALS [J].

FRANK, FC .

ACTA CRYSTALLOGRAPHICA, 1951, 4 (06) :497-501

[5] Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire [J].

Golan, Y ;

Wu, XH ;

Speck, JS ;

Vaudo, RP ;

Phanse, VM .

APPLIED PHYSICS LETTERS, 1998, 73 (21) :3090-3092

[6] Dislocation mediated surface morphology of GaN [J].

Heying, B ;

Tarsa, EJ ;

Elsass, CR ;

Fini, P ;

DenBaars, SP ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6470-6476

[7]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[8] Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN [J].

Lee, JW ;

Paek, HS ;

Yoo, JB ;

Kim, GH ;

Kum, DW .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :12-15

[9] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[10]

MOLNAR RJ, 1997, J CRYST GROWTH, V70, P3377

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