Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms

被引：0
|
作者：
Poon, Joyce K. S. [1 ]
Sacher, Wesley D. [1 ]
Huang, Ying [2 ]
Lo, Guo-Qiang [2 ]
机构：
[1] Univ Toronto, Dept Elect & Comp Engn, 10 Kings Coll Rd, Toronto, ON M5S 3G4, Canada
[2] ASTAR, Inst Microelect, Singapore 117685, Singapore
来源：
2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年
关键词：
Integrated optics; photonic integrated circuits; POLARIZATION ROTATOR-SPLITTERS; GRATING COUPLER; WIDE BANDWIDTH; CHIP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Progress in multilayer silicon nitride on silicon integrated photonic platforms will be presented. Such platforms enable improved passive photonic components in the telecommunication wavelength bands integrated with active silicon (and potentially hybrid silicon) components, while remaining compatible with wafer-scale silicon foundry fabrication and packaging processes. The reduced losses, scattering, thermo-optic coefficient, nonlinearity of moderate refractive index contrast silicon nitride waveguides compared to silicon waveguides motivate the development of such multilayer photonic platforms.
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页数：4
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