Light emission polarization properties of semipolar InGaN/GaN quantum well

被引：33
作者：
Huang, Hung-Hsun [1 ]
Wu, Yuh-Renn
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 05期
关键词：
EMITTING-DIODES; OPTICAL-PROPERTIES; GAN SUBSTRATE; NONPOLAR; PLANE; GREEN; POWER; BLUE;
D O I：
10.1063/1.3327794
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
As many reports show that the InGaN quantum wells grown on semipolar substrate have better efficiency in the green spectrum, it is important to understand the light emission properties of these semipolar quantum wells. In this paper, we have studied the optical characteristics of a semipolar InGaN/GaN quantum well with different growth orientations. Also, the most common growth directions such as (10 (1) over bar(3) over bar) and (11 (2) over bar2) planes are studied in details. The self-consistent Poisson and 6 X 6 k . p Schrodinger solver has been applied to study the band structure of the semipolar InGaN-based quantum well. We find that the light emission polarization ratio has a very interesting switching behavior under different conditions of indium compositions, quantum well widths, and injection carrier densities. Our results show that the semipolar InGaN quantum well has a potential to be a polarized light source under certain conditions. (C) 2010 American Institute of Physics. [doi:10.1063/1.3327794]
引用
收藏
页数：7
相关论文
共 36 条
[1]   Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates [J].
Chakraborty, A ;
Baker, TJ ;
Haskell, BA ;
Wu, F ;
Speck, JS ;
Denbaars, SP ;
Nakamura, S ;
Mishra, UK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L945-L947
[2]   Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions [J].
Chiu, C. H. ;
Kuo, S. Y. ;
Lo, M. H. ;
Ke, C. C. ;
Wang, T. C. ;
Lee, Y. T. ;
Kuo, H. C. ;
Lu, T. C. ;
Wang, S. C. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[3]   LEDs for Solid-State Lighting: Performance Challenges and Recent Advances [J].
Crawford, Mary H. .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (04) :1028-1040
[4]   Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes [J].
Feezell, Daniel F. ;
Schmidt, Mathew C. ;
DenBaars, Steven P. ;
Nakamura, Shuji .
MRS BULLETIN, 2009, 34 (05) :318-323
[5]   Increased Polarization Ratio on Semipolar (11(2)over-bar2) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition [J].
Fellows, Natalie ;
Sato, Hitoshi ;
Masui, Hisashi ;
DenBaars, Steven P. ;
Nakamura, Shuji .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (10) :7854-7856
[6]   Polarized light emission from semipolar GaInN quantum wells on {1(1)over-bar01} GaN facets [J].
Feneberg, M. ;
Lipski, F. ;
Sauer, R. ;
Thonke, K. ;
Brueckner, P. ;
Neubert, B. ;
Wunderer, T. ;
Scholz, F. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
[7]   Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates [J].
Funato, Mitsuru ;
Ueda, Masaya ;
Kawakami, Yoichi ;
Narukawa, Yukio ;
Kosugi, Takao ;
Takahashi, Masayoshi ;
Mukai, Takashi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L659-L662
[8]   Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy -: art. no. 075202 [J].
Ghosh, S ;
Waltereit, P ;
Brandt, O ;
Grahn, HT ;
Ploog, KH .
PHYSICAL REVIEW B, 2002, 65 (07) :1-7
[9]   Band-edge photoluminescence and reflectivity of nonpolar (11(2)over-bar0) and semipolar (11(2)over-bar2) GaN formed by epitaxial lateral overgrowth on sapphire [J].
Guehne, T. ;
Bougrioua, Z. ;
Lauegt, S. ;
Nemoz, M. ;
Vennegues, P. ;
Vinter, B. ;
Leroux, M. .
PHYSICAL REVIEW B, 2008, 77 (07)
[10]   Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes [J].
Huang, Hung-Hsun ;
Wu, Yuh-Renn .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
1234