Block copolymer multiple patterning integrated with conventional ArF lithography

被引：65

作者：

Park, Seung Hak ^{[1
]}

Shin, Dong Ok ^{[1
]}

Kim, Bong Hoon ^{[1
]}

Yoon, Dong Ki ^{[2
]}

Kim, Kyoungseon ^{[2
]}

Lee, Si Yong ^{[2
]}

Oh, Seok-Hwan ^{[2
]}

Choi, Seong-Woon ^{[2
]}

Jeon, Sang Chul ^{[3
]}

Kim, Sang Ouk ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Samsung Elect, Semicond R&D Ctr, Device Solut Div, Hwasung City 445701, Gyeonggi Do, South Korea

[3] Natl Nanofab Ctr, Taejon 305701, South Korea

来源：

SOFT MATTER | 2010年 / 6卷 / 01期

关键词：

CARBON NANOTUBE ARRAYS; DIBLOCK COPOLYMER; TEMPLATES; GRAPHOEPITAXY; MEDIA;

D O I：

10.1039/b913853f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

引用

页码：120 / 125

页数：6

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