Wet oxidation for detecting surface defect pits of AlGaAs related semiconductors

被引：3

作者：

Peng, CS ^{[1
]}

Konttinen, J ^{[1
]}

Jouhti, T ^{[1
]}

Liu, HF ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 274卷 / 1-2期

基金：

芬兰科学院;

关键词：

defect; wet oxidation; molecular beam epitaxy; AlGaAs;

D O I：

10.1016/j.jcrysgro.2004.09.084

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on a new technology to detect the surface defect (SD) density of AlGaAs related materials by wet thermal oxidation. After oxidation, the color around the defect differs from that of the surrounding under an optical microscope. The defect density can be easily counted even in the case of low density. Because the oxidation temperature, 370degreesC, is much lower than layer-growth temperature, oxidation does not induce additional SD. The density counted in this way is exactly the real one. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：138 / 143

页数：6

共 9 条

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