Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

被引：5

作者：

Yang, J. ^{[1
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Chen, P. ^{[1
]}

Zhu, J. J. ^{[1
]}

Liu, Z. S. ^{[1
]}

Le, L. C. ^{[1
]}

Li, X. J. ^{[1
]}

He, X. G. ^{[1
]}

Liu, J. P. ^{[2
]}

Zhang, L. Q. ^{[2
]}

Yang, H. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2016年 / 34卷 / 01期

基金：

中国国家自然科学基金;

关键词：

RESONANT-TUNNELING DIODES; DOUBLE-BARRIER DIODES; INSTABILITIES; EMISSION;

D O I：

10.1116/1.4937265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anomalous current-voltage behaviors, such as negative differential resistance (NDR) and current hysteresis, are observed in the room-temperature current-voltage (I-V) curves of InGaN/GaN multiple-quantum-well light-emitting diodes. It is found that the NDR can be observed in the positive voltage range of the I-V curve only when the samples are pretreated with a negative voltage before sweeping, and the NDR disappears permanently after an over-current treatment. The dependence of the NDR upon the negative voltage and sweeping conditions leads to the conclusion that a variation of the charging state of the defect-induced hole traps is responsible for the anomalous I-V behaviors. Therefore, NDR is excluded as a feature of the tunneling transport mechanism, especially in GaN-based devices with a high defect density. (C) 2015 American Vacuum Society.

引用

页数：4

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