Watt-Level Non-Uniform Distributed 6-37 GHz Power Amplifier MMIC with Dual-Gate Driver Stage in GaN Technology

被引：0

作者：

Dennler, Philippe ^{[1
]}

Quay, Ruediger ^{[1
]}

Brueckner, Peter ^{[1
]}

Schlechtweg, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

来源：

2014 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR) | 2014年

关键词：

AlGaN/GaN; distributed amplifiers; NDPA; dual-gate; broadband amplifiers; HEMTs; mmW; MMICs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applications up to the Ka-band such as electronic warfare systems. The MMIC is based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line technology with an f(T) > 80 GHz. The designed and fabricated amplifier uses the non-uniform distributed power amplifier topology and covers a frequency range from 6GHz to 37 GHz, whereas the lower band edge is limited by the on-chip DC bias network. The MMIC is a dual-stage topology which employs dual-gate HEMTs in the driver stage in order to boost the gain of the overall amplifier. The measured S-21 is (17 +/- 1) dB. This is a significant increase of 3 dB as compared to a driver stage using standard common-source HEMTs. An output power well beyond 1W over the entire frequency range is obtained. To the authors' knowledge, this is the highest output power achieved by a distributed amplifier at this frequency range.

引用

页码：37 / 39

页数：3

共 12 条

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